In summary, accounting for DIBL leads to more overall leakage in both cases. However, the leakage through series transistors is much less than half of that through a single transistor because the bottom transistor sees a small Vds and much less DIBL. This is called the stack effect. For n = , the leakage currents through a single transistor and pair of transistors are pA and pA, respectively. VIL = ; VIH = ; VOL = ; VOH = ; NMH = ; NML = Either take the grungy derivative for the unity gain point.
