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Báo cáo hóa học: " Growth of Inclined GaAs Nanowires by Molecular Beam Epitaxy: Theory and Experiment"

Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: Growth of Inclined GaAs Nanowires by Molecular Beam Epitaxy: Theory and Experiment | Nanoscale Res Lett 2010 5 1692-1697 DOI 10.1007 s11671-010-9698-7 NANO EXPRESS Growth of Inclined GaAs Nanowires by Molecular Beam Epitaxy Theory and Experiment X. Zhang V. G. Dubrovskii N. V. Sibirev G. E. Cirlin C. Sartel M. Tchernycheva J. C. Harmand F. Glas Received 2 June 2010 Accepted 2 July 2010 Published online 24 July 2010 The Author s 2010. This article is published with open access at Springerlink.com Abstract The growth of inclined GaAs nanowires NWs during molecular beam epitaxy MBE on the rotating substrates is studied. The growth model provides explicitly the NW length as a function of radius supersaturations diffusion lengths and the tilt angle. Growth experiments are carried out on the GaAs 211 A and GaAs 111 B substrates. It is found that 20 inclined NWs are two times longer in average which is explained by a larger impingement rate on their sidewalls. We find that the effective diffusion length at 550 C amounts to 12 nm for the surface adatoms and is more than 5 000 nm for the sidewall adatoms. Supersaturations of surface and sidewall adatoms are also estimated. The obtained results show the importance of sidewall adatoms in the MBE growth of NWs neglected in a number of earlier studies. X. Zhang Key Laboratory of Information Photonics and Optical Communications Ministry of Education Beijing University of Posts and Telecommunications P.O. Box 66 100876 Beijing China X. Zhang V. G. Dubrovskii N. V. Sibirev G. E. Cirlin St.-Petersburg Academic University RAS Khlopina 8 3 194021 St.-Petersburg Russia V. G. Dubrovskii G. E. Cirlin Ioffe Physical-Technical Institute RAS Politekhnicheskaya 26 194021 St.-Petersburg Russia e-mail dubrovskii@mail.ioffe.ru G. E. Cirlin C. Sartel J. C. Harmand F. Glas CNRS-LPN Route de Nozay 91460 Marcoussis France M. Tchernycheva Department OptoGaN Institut d Electronique Fondamentale UMR 8622 cNrS 91405 Orsay Cedex France Keywords Inclined GaAs nanowires Molecular beam epitaxy Surface diffusion Introduction A rapidly .