Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: Growth and fabrication of InAs/GaSb type II superlattice mid-wavelength infrared photodetectors | Nanoscale Research Letters SpringerOpen0 This Provisional PDF corresponds to the article as it appeared upon acceptance. Fully formatted PDF and full text HTML versions will be made available soon. Growth and fabrication of InAs GaSb type II superlattice mid-wavelength infrared photodetectors Nanoscale Research Letters 2011 6 635 doi 1556-276X-6-635 Jianxin Chen jianxinchen@ Qingqing Xu xuqq@ Yi Zhou zhouyi_1986@ Jupeng Jing jinjupeng@ Chun Lin chun_lin@ Li He lihe@ ISSN 1556-276X Article type Nano Express Submission date 8 September 2011 Acceptance date 22 December 2011 Publication date 22 December 2011 Article URL http content 6 1 635 This peer-reviewed article was published immediately upon acceptance. It can be downloaded printed and distributed freely for any purposes see copyright notice below . Articles in Nanoscale Research Letters are listed in PubMed and archived at PubMed Central. For information about publishing your research in Nanoscale Research Letters go to http authors instructions For information about other SpringerOpen publications go to http 2011 Chen et al. licensee Springer. This is an open access article distributed under the terms of the Creative Commons Attribution License http licenses by which permits unrestricted use distribution and reproduction in any medium provided the original work is properly cited. Growth and fabrication of InAs GaSb type II superlattice mid-wavelength infrared photodetectors Jianxin Chen 1 Qingqing Xu1 Yi Zhou1 Jupeng Jing1 Chun Lin1 and Li He1 1Key Laboratory of Infrared Imaging Materials and Detectors Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai 200083 China Corresponding author J ianxinchen@ Email addresses JC J ianxinchen@ QX qqx @ YZ zhouyi .
