Tham khảo tài liệu 'silicon carbide materials processing and applications in electronic devices part 16', kỹ thuật - công nghệ, cơ khí - chế tạo máy phục vụ nhu cầu học tập, nghiên cứu và làm việc hiệu quả | 515 Compilation on Synthesis Characterization and Properties of Silicon and Boron Carbonitride Films h. V Ekin EBV k 9 where irradiation energy Ekin energy of the emitting electron and EBV k binding energy. The determination of the different binding energies of an element in a sample is the most important power of XPS. It is stated by the chemical shift in comparison to a pure substance. For fixing the energy resolution over the total measuring region the electrons are limited to a constant velocity before their entrance into the analyzer pass energy . Transmission Electron Microscopy TEM In transmission electron microscopy TEM an electron beam is transmitted through an ultra thin sample. An image is formed from the interaction . absorption diffraction of the electrons with the specimen. The electrons are guided through an expanded electron optical column. The imaging device is a fluorescent screen a photographic film or a CCD camera Fultz Howe 2007 Rose 2008 . The analytical power of a TEM is described by the resolution properties By reduction of spherical aberrations a magnification of 50 million times resolution Ấ 50 pm is reached. The ability to determine the position of atoms has made the high-resolution TEM HRTEM an indispensable tool for nanotechnology research including heterogeneous catalysis and the development of semiconductor devices for electronics and photonics O Keefe Allard 2004 . High quality samples will have a thickness of only a few tens of nanometers. Preparation of TEM specimen is specific to the material under analysis. Some of the methods for preparing such samples are Tissue sectioning by a microtome sample staining mechanical milling chemical etching and ion etching sputtering . Recently focussed ion beams FIB have been used for sample preparation Baram Kaplan 2008 . For measurement of the fine structure of absorption edges to determine chemical differences in nano structures electron energy loss spectroscopy EELS can be .
