Tham khảo tài liệu 'properties and applications of silicon carbide part 19', kỹ thuật - công nghệ, cơ khí - chế tạo máy phục vụ nhu cầu học tập, nghiên cứu và làm việc hiệu quả | 532 Properties and Applications of Silicon Carbide For the simulation study a set of carefully designed thermal boundary conditions were simulated in 2D using the software TWS AdvantEdge software. The simulations were used to predict the thermal softening behavior of SiC using the Drucker-Prager yield criterion. In the results of each of the cases there is a decreasing trend in cutting forces and pressures with an increase in temperature. This confirms the thermal softening behavior due to simulated laser heating which reduces the hardness of the material. The interaction between stress and temperature was also determined from the boundary condition simulation outputs. It showed that the dominance of stress decreases with increase in temperature. 5. Future Research The results and data obtained will be implemented in establishing machining parameters to perform ductile mode micro-laser assisted single point diamond turning SPDT on SiC. Various scratch tests are currently being conducted to establish optimized correlation between laser power and machining parameters such as depth of cut feed and cutting speed. High pressure and temperature experiments have been studied and currently under analysis to determine the pressure-temperature correlation with the phase transition during the p-LAM process using laser heated diamond anvil cells DAC . This analysis however neglects the effect due to shear forces which is believed to contribute significantly in the phase transformation of SiC . To include shear force analysis a new DAC is being developed that will account for the missing shear component in a regular DAC cell. Furthermore the change in lattice volume will be calculated and the cell structure of the newly developed high pressure phase material will be determined. Laser absorption measurements are also being conducted on the current high pressure phase samples to optimize the laser power during the p-LAM process. 6. Acknowledgements The authors would like to thank
