Tuyển tập các báo cáo nghiên cứu khoa học ngành toán học được đăng trên tạp chí toán học quốc tế đề tài: The structural and optical properties of GaSb/InGaAs type- quantum dots grown on InP (100) substrate | Nanoscale Research Letters SpringerOpen0 This Provisional PDF corresponds to the article as it appeared upon acceptance. Fully formatted PDF and full text HTML versions will be made available soon. The structural and optical properties of GaSb InGaAs type- quantum dots grown on InP 100 substrate Nanoscale Research Letters 2012 7 87 doi 1556-276X-7-87 Zhang Shuhui zhangshuhui2008@ Wang Lu lwang@ Shi Zhenwu zhenwushi@ Cui Yanxiang yxcui@ Tian Haitao etianhaitao@ Gao Huaiju gege3272@ Jia Haiqiang mbe2@ Wang Wenxin wxwang@ Chen Hong hchen@ Zhao Liancheng lczhao@ ISSN 1556-276X Article type Original paper Submission date 19 September 2011 Acceptance date 25 January 2012 Publication date 25 January 2012 Article URL http content 7 1 87 This peer-reviewed article was published immediately upon acceptance. It can be downloaded printed and distributed freely for any purposes see copyright notice below . Articles in Nanoscale Research Letters are listed in PubMed and archived at PubMed Central. For information about publishing your research in Nanoscale Research Letters go to http authors instructions For information about other SpringerOpen publications go to http 2012 Shuhui et al. licensee Springer. This is an open access article distributed under the terms of the Creative Commons Attribution License http licenses by which permits unrestricted use distribution and reproduction in any medium provided the original work is properly cited. The structural and optical properties of GaSb InGaAs type-II quantum dots grown on InP 100 substrate Zhang Shuhui1 Wang Lu 2 Shi Zhenwu2 Cui Yanxiang2 Tian Haitao2 Gao Huaiju2 Jia Haiqiang2 Wang Wenxin2 Chen Hong2 and Zhao Liancheng 1 1School of Materials Science and Engineering Harbin Institute of Technology Harbin 150001 China .
