Tuyển tập các báo cáo nghiên cứu khoa học ngành toán học được đăng trên tạp chí toán học quốc tế đề tài: Structure and electrical properties of sputtered TiO2/ZrO2 bilayer composite dielectrics upon annealing in nitrogen | Dong et al. Nanoscale Research Letters 2012 7 31 http content 7 1 31 o Nanoscale Research Letters a SpringerOpen Journal ORIGINAL PAPER Open Access Structure and electrical properties of sputtered TiO2 ZrO2 bilayer composite dielectrics upon annealing in nitrogen Ming Dong1 Hao Wang2 Cong Ye2 Liangping Shen2 Yi Wang2 Jieqiong Zhang2 and Yun Ye2 Abstract The high-k dielectric TiO2 ZrO2 bilayer composite film was prepared on a Si substrate by radio frequency magnetron sputtering and post annealing in N2 at various temperatures in the range of 573 K to 973 K. Transmission electron microscopy observation revealed that the bilayer film fully mixed together and had good interfacial property at 773 K. Metal-oxide-semiconductor capacitors with high-k gate dielectric TiO2 ZrO2 p-Si were fabricated using Pt as the top gate electrode and as the bottom side electrode. The largest property permittivity of and a very low leakage current density of X 10-5 A cm2 were achieved for the sample of TiO2 ZrO2 Si after annealing at 773 K. Introduction High dielectric constant high-k materials have been researched for a few years in material science and have been applied firstly in Intel s 45 nm MOSFET in 2007. Nowadays for the demand of the next generation devices for sub-22 nm technology nodes expect that high-k materials such as HfO2 ZrO2 Ta2O5 and rare earth oxides are extensively researched and binary oxides of high-k materials become more attractive and are expected to be utilized in the future ultra large scale integrated circuit 1-8 . Among them ZrO2 has a relatively high permittivity large band gap and good thermal and chemical stabilities. TiO2 is a high-k material with a very high permittivity of about 80 9 . In order to improve the permittivity of ZrO2 the feasible way is to fabricate ZrO2-TiO2 composite films. Meanwhile as a composite thin film the addition of TiO2 can improve the crystallization temperature 10 11 . As ZrO2-TiO2 binary .
