Tuyển tập các báo cáo nghiên cứu khoa học ngành toán học được đăng trên tạp chí toán học quốc tế đề tài: Transparent SiON/Ag/SiON multilayer passivation grown on flexible polyethersulfone substrate by using | Nanoscale Research Letters SpringerOpen0 This Provisional PDF corresponds to the article as it appeared upon acceptance. Fully formatted PDF and full text HTML versions will be made available soon. Transparent SiON Ag SiON multilayer passivation grown on flexible polyethersulfone substrate by using continuous roll-to-roll sputtering system Nanoscale Research Letters 2012 7 69 doi 1556-276X-7-69 Han-Ki Kim imdlhkkim@ Chung-Ki Cho ccksky@ ISSN 1556-276X Article type Nano Express Submission date 9 September 2011 Acceptance date 5 January 2012 Publication date 5 January 2012 Article URL http content 7 1 69 This peer-reviewed article was published immediately upon acceptance. It can be downloaded printed and distributed freely for any purposes see copyright notice below . Articles in Nanoscale Research Letters are listed in PubMed and archived at PubMed Central. For information about publishing your research in Nanoscale Research Letters go to http authors instructions For information about other SpringerOpen publications go to http 2012 Kim and Cho licensee Springer. This is an open access article distributed under the terms of the Creative Commons Attribution License http licenses by which permits unrestricted use distribution and reproduction in any medium provided the original work is properly cited. Transparent SiON Ag SiON multilayer passivation grown on a flexible polyethersulfone substrate using a continuous roll-to-roll sputtering system Han-Ki Kim 1 and Chung-Ki Cho1 department of Advanced Materials Engineering for Information and Electronics Kyung Hee University 1 Seocheon-dong Yongin-si Gyeonggi-do 446-701 South Korea Corresponding author imdlhkkim @ Email addresses C-KC ccksky@ H-KK imdlhkkim@ Abstract We have investigated the characteristics of a silicon oxynitride silver silicon oxynitride SiON Ag SiON .
