Tuyển tập các báo cáo nghiên cứu về hóa học được đăng trên tạp chí hóa hoc quốc tế đề tài : Characterization upon electrical hysteresis and thermal diffusion of TiAl3Ox dielectric film | Shi and Liu Nanoscale Research Letters 2011 6 557 http content 6 1 557 o Nanoscale Research Letters a SpringerOpen Journal NANO EXPRESS Open Access Characterization upon electrical hysteresis and thermal diffusion of TiAl3Ox dielectric film Lei Shi 1 and Zhiguo Liu2 Abstract In this paper we have investigated the electrical properties of TiAl3Ox film as electrical gate insulator deposited by pulsed laser deposition and presented a simple method to describe the thermal diffusion behaviors of metal atoms at TiAl3Ox Si interfacial region in detail. The TiAl3Ox films show obvious electrical hysteresis by the capacitancevoltage measurements after post-annealing treatment. By virtue of the diffusion models composed of TiAl3Ox film and silicon the diffusion coefficient and the diffusion activation energy of the Ti and Al atoms are extracted. It is valuable to further investigate the pseudobinary oxide system in practice. PACS . Keywords electrical hysteresis thermal diffusion pulsed laser deposition Introduction High electrical permittivity k insulators are presently investigated as possible replacements of SiO2 or SiON film gate dielectric in order to hurdle the increased tunneling leakage current while the devices are further scaled down. Although a huge number of single-phase high-k materials have been investigated there is no suitable material that could completely replace the traditional SiO2 as gate dielectrics 1-4 . It is exciting that the recent researches have been concentrated upon the pseudobinary oxides mostly. This section focuses on all these candidates in an attempt to combine and complement the desirable properties from different materials and then overcome the deficiencies associated with the individual material. Furthermore the criteria for possible replacement dielectrics require that those materials are chemically stable on silicon substrates at high temperature as well. In fact most of these potential
