Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: Formation of silicon nanodots via ion beam sputtering of ultrathin gold thin film coatings on Si | El-Atwani et al. Nanoscale Research Letters 2011 6 403 http content 6 1 403 o Nanoscale Research Letters a SpringerOpen Journal NANO EXPRESS Open Access Formation of silicon nanodots via ion beam sputtering of ultrathin gold thin film coatings on Si Osman El-Atwani1 2 Sami Ortoleva3 Alex Cimaroli4 and Jean Paul Allain1 2 4 Abstract Ion beam sputtering of ultrathin film Au coatings used as a physical catalyst for self-organization of Si nanostructures has been achieved by tuning the incident particle energy. This approach holds promise as a scalable nanomanufacturing parallel processing alternative to candidate nanolithography techniques. Structures of 11- to 14-nm Si nanodots are formed with normal incidence low-energy Ar ions of 200 eV and fluences above 2 X 1017 cm-2. In situ surface characterization during ion irradiation elucidates early stage ion mixing migration mechanism for nanodot self-organization. In particular the evolution from gold film islands to the formation of ion-induced metastable gold silicide followed by pure Si nanodots formed with no need for impurity seeding. Nanostructuring of semiconductor surfaces via ion beam sputtering has been shown to yield a variety of ordered nanostructures 1-3 . While there is speculation about the mechanism of nanostructure evolution on compound semiconductors the structuring of single-component semiconductor materials and more specifically silicon remains elusive. Although structuring of silicon surfaces using ion beam bombardment at normal incidence was first reported by R. Gago et al. 4 studies later on have shown that structuring of silicon dots on silicon surfaces at zero incidence angle is possible only if a certain level of impurity is available on the surface during the sputtering process 5 . Moreoever other studies have shown that irradiating silicon surfaces with no impurity seeding results in surface smoothing at normal incidence 6 7 in contradiction to the results of R. Gago .
