Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: Atomic scale investigation of silicon nanowires and nanoclusters | Roussel et al. Nanoscale Research Letters 2011 6 271 http content 6 1 271 o Nanoscale Research Letters a SpringerOpen Journal NANO REVIEW Open Access Atomic scale investigation of silicon nanowires and nanoclusters 1 1 1 1 1 2 Manuel Roussel Wanghua Chen Etienne Talbot Rodrigue Lardé Emmanuel Cadel Fabrice Gourbilleau Bruno Grandidier3 Didier Stiévenard3 and Philippe Pareige 1 Abstract In this study we have performed nanoscale characterization of Si-clusters and Si-nanowires with a laser-assisted tomographic atom probe. Intrinsic and p-type silicon nanowires SiNWs are elaborated by chemical vapor deposition method using gold as catalyst silane as silicon precursor and diborane as dopant reactant. The concentration and distribution of impurity gold and dopant boron in SiNW are investigated and discussed. Silicon nanoclusters are produced by thermal annealing of silicon-rich silicon oxide and silica multilayers. In this process atom probe tomography APT provides accurate information on the silicon nanoparticles and the chemistry of the nanolayers. Introduction Low-dimensional nano-structured materials such as carbon nanotubes 1 silicon nanowires SiNWs 2 and silicon nanoclusters SiNCs 3 have attracted much interest in recent years because of their special properties electrical optical mechanical etc. compared to bulk materials. The morphology and number density of nanoclusters as well as the dopant or impurity concentration and their spatial distributions in nanowires can greatly affect their properties. Thus a key issue that remains is to analyze and characterize nano-structured materials at the atomic scale. In this study we have used the laser-assisted wide angle Tomographic Atom Probe to characterize SiNWs and SiNCs respectively. The atom probe tomography APT involves the use of a three-dimensional 3D high-resolution analytic microscope that can map the spatial distribution of atoms in materials at the atomic scale. The principle of the .
