Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: Simple two-step fabrication method of Bi2Te3 nanowires | Kang et al. Nanoscale Research Letters 2011 6 277 http content 6 1 277 o Nanoscale Research Letters a SpringerOpen Journal NANO EXPRESS Open Access Simple two-step fabrication method of Bi2Te3 nanowires Joohoon Kang Jin-Seo Noh and Wooyoung Lee Abstract Bismuth telluride Bi2Te3 is an attractive material for both thermoelectric and topological insulator applications. Its performance is expected to be greatly improved when the material takes nanowire structures. However it is very difficult to grow high-quality Bi2Te3 nanowires. In this study a simple and reliable method for the growth of Bi2Te3 nanowires is reported which uses post-sputtering and annealing in combination with the conventional method involving on-film formation of nanowires. Transmission electron microscopy study shows that Bi2Te3 nanowires grown by our technique are highly single-crystalline and oriented along 110 direction. Introduction Low-dimensional nanostructures have received great attention due to their unique and unusual properties in many research fields related to nanoscience and nanotechnology 1 . One of the low-dimensional nanostructures namely the one-dimensional 1D nanowire has a high aspect-ratio making it suitable for future electronic and thermoelectric devices and new types of sensors 2 3 . In particular it is believed that the classical size effect and quantum confinement effect in 1D nanowire play a crucial role in enhancing thermoelectric performance 1 4 5 . Bismuth telluride Bi2Te3 is well known for its high thermoelectric figure-of-merit ZT 1 in bulk. Moreover its thermoelectric performance is expected to be remarkably improved for nanowire structures as a consequence of the high thermoelectric power S2s and suppressed thermal conductivity k in the low-dimensional structures 6 7 . More recently Bi2Te3 has also been intensively investigated for the search of an efficient topological insulator since the observation of the quantum-spin-Hall-like .
