Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: Solution-processed germanium nanowirepositioned Schottky solar cells | Yun et al. Nanoscale Research Letters 2011 6 287 http content 6 1 287 o Nanoscale Research Letters a SpringerOpen Journal NANO EXPRESS Open Access Solution-processed germanium nanowire-positioned Schottky solar cells 3 1 1 2 4 Ju-Hyung Yun Yun Chang Park Joondong Kim Hak-Joo Lee Wayne A Anderson and Jeunghee Park Abstract Germanium nanowire GeNW -positioned Schottky solar cell was fabricated by a solution process. A GeNW-containing solution was spread out onto asymmetric metal electrodes to produce a rectifying current flow. Under one-sun illumination the GeNW-positioned Schottky solar cell yields an open-circuit voltage of 177 mV and a short-circuit current of nA. Schottky and ohmic contacts between a single GeNW and different metal electrodes were systematically investigated. This solution process may provide a route to the cost-effective nanostructure solar architecture. Introduction Nanostructures such as carbon nanotubes and nanowires have emerged as potential building blocks in nanoscale applications of microscopy tips 1 gas sensors 2 nanoscale interconnects 3 and field emitters 4 mainly because of their tiny size satisfying the needs of down-scale schemes efficiently and effectively. Recently semiconducting nanowires have been intensively investigated for the production of cost-effective solar cells 5 . This type of nanostructure provides advantages of a short length of carrier collection 5 6 and enhancement of the optical absorption in comparison with the bulk structure 7 . Although the advantages of nanowire-utilizing solar cells have been predicted their promising potential has not been much achieved because of the difficulty of the junction formation in the tiny nanostructure. The Schottky contact of the metalsemiconductor has attracted huge interests for applications such as the UV detectors nanogenerators and solar cells 8-10 because of the ease of junction formation of the semiconducting nanostructures. Germanium Ge .
