Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: Anisotropic TixSn1-xO2 nanostructures prepared by magnetron sputter deposition | Chen et al. Nanoscale Research Letters 2011 6 326 http content 6 1 326 o Nanoscale Research Letters a SpringerOpen Journal NANO EXPRESS Open Access Anisotropic TixSn1-xO2 nanostructures prepared by magnetron sputter deposition Shutian Chen Zhengcao Li and Zhengjun Zhang Abstract Regular arrays of TixSn1-xO2 nanoflakes were fabricated through glancing angle sputter deposition onto selfassembled close-packed arrays of 200-nm-diameter polystyrene spheres. The morphology of nanostructures could be controlled by simply adjusting the sputtering power of the Ti target. The reflectance measurements showed that the melon seed-shaped nanoflakes exhibited optimal properties of antireflection in the entire visible and ultraviolet region. In addition we determined their anisotropic reflectance in the direction parallel to the surface of nanoflakes and perpendicular to it arising from the anisotropic morphology. Introduction Much research has recently been focused on the design of nanoscale semiconductor oxide materials with controlled morphology and novel morphology-dependent physical properties. As an n-type semiconductor oxide with a wide band gap Eg eV at 300 K SnO2 is well known for its potential applications in gas sensing 1 photoconductors 2 photocatalysis 3 and dye-sensitized solar cells 4 . Similar to other highly transparent semiconductors SnO2 is also expected to be a competitive candidate for optical devices 5 . To optimize the optical properties tuning the composition and tailoring the morphology are very important. Numerous techniques have been developed to synthesize SnO2 films. The advantage of magnetron sputter deposition lies in the ease and flexibility of doping which is an effective method to adjust the composition and to ensure good homogeneity and repeatability. Ti is an appealing alternative for doping compared to other elements quantities of which are restricted due to the emergence of the second phase. Owing to the .
