Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: Effect of ion implantation energy for the synthesis of Ge nanocrystals in SiN films with HfO2/SiO2 stack tunnel dielectrics for memory application | Sahu et al. Nanoscale Research Letters 2011 6 177 http content 6 1 177 o Nanoscale Research Letters a SpringerOpen Journal NANO EXPRESS Open Access Effect of ion implantation energy for the synthesis of Ge nanocrystals in SiN films with HfO2 SiO2 stack tunnel dielectrics for memory application 1 2 1 1 1 2 Bhabani Shankar Sahu Florence Gloux Abdelilah Slaoui Marzia Carrada Dominique Muller Jesse Groenen Caroline Bonafos2 Sandrine Lhostis3 Abstract Ge nanocrystals Ge-NCs embedded in SiN dielectrics with HfO2 SiO2 stack tunnel dielectrics were synthesized by utilizing low-energy 5 keV ion implantation method followed by conventional thermal annealing at 800 C the key variable being Ge ion implantation energy. Two different energies 3 and 5 keV have been chosen for the evolution of Ge-NCs which have been found to possess significant changes in structural and chemical properties of the Ge -implanted dielectric films and well reflected in the charge storage properties of the Al SiN Ge-NC SiN HfO2 SiO2 Si metal-insulator-semiconductor MIS memory structures. No Ge-NC was detected with a lower implantation energy of 3 keV at a dose of X 1016 cm-2 whereas a well-defined 2D-array of nearly spherical and well-separated Ge-NCs within the SiN matrix was observed for the higher-energy-implanted 5 keV sample for the same implanted dose. The MIS memory structures implanted with 5 keV exhibits better charge storage and retention characteristics compared to the low-energy-implanted sample indicating that the charge storage is predominantly in Ge-NCs in the memory capacitor. A significant memory window of V has been observed under the low operating voltage of 6 V with good retention properties indicating the feasibility of these stack structures for low operating voltage non-volatile memory devices. Introduction During the last decade non-volatile memory NVM structures consisting of semiconductor nanocrystals NCs in particular Si and Ge-NCs embedded .
