Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: Effect of annealing treatments on photoluminescence and charge storage mechanism in silicon-rich SiNx:H films | Sahu et al. Nanoscale Research Letters 2011 6 178 http content 6 1 178 o Nanoscale Research Letters a SpringerOpen Journal NANO EXPRESS Open Access Effect of annealing treatments on photoluminescence and charge storage mechanism in silicon-rich SiNx H films Bhabani Shankar Sahu Florian Delachat Abdelilah Slaoui Marzia Carrada Gerald Ferblantier Dominique Muller Abstract In this study a wide range of a-SiNx H films with an excess of silicon 20 to 50 were prepared with an electroncyclotron resonance plasma-enhanced chemical vapor deposition system under the flows of NH3 and SiH4. The silicon-rich a-SiNx H films SRSN were sandwiched between a bottom thermal SiO2 and a top Si3N4 layer and subsequently annealed within the temperature range of 500-1100 C in N2 to study the effect of annealing temperature on light-emitting and charge storage properties. A strong visible photoluminescence PL at room temperature has been observed for the as-deposited SRSN films as well as for films annealed up to 1100 C. The possible origins of the PL are briefly discussed. The authors have succeeded in the formation of amorphous Si quantum dots with an average size of about 3 to nm by varying excess amount of Si and annealing temperature. Electrical properties have been investigated on Al Si3N4 SRSN SiO2 Si structures by capacitancevoltage and conductance-voltage analysis techniques. A significant memory window of V was obtained at a low operating voltage of 8 V for the sample containing 25 excess silicon and annealed at 1000 C indicating its utility in low-power memory devices. Introduction Silicon nitride-based dielectrics are drawing considerable attention because of their utility in a wide variety of electronic and optoelectronic applications due to their compatibility with the existing mainstream CMOS technology and tunable emission in visible range which can be applied for developing non-volatile memories and Si-based light-emitting diodes 1-6 . The
