Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: Growth and characterization of gold catalyzed SiGe nanowires and alternative metal-catalyzed Si nanowires | Potié et al. Nanoscale Research Letters 2011 6 187 http content 6 1 187 o Nanoscale Research Letters a SpringerOpen Journal NANO EXPRESS Open Access Growth and characterization of gold catalyzed SiGe nanowires and alternative metal-catalyzed Si nanowires 13 1 1 1 1 1 Alexis Potié Thierry Baron Florian Dhalluin Guillaume Rosaz Bassem Salem Laurence Latu-Romain h I s r I IX z 1 z 1I- r p. s 71 D r r I í I I Z X2 c p k r p I ZM 2 I I I vr h I r t hAr3 I Z Z r l zz I r z 14 I_lz r zz Dcsi Ir r z l4 Martin Kogelschatz Pascal Gentile Fabrice Oehler Laurent Montès Jens Kreisel Hervé Roussel Abstract The growth of semiconductor SC nanowires NW by CVD using Au-catalyzed VLS process has been widely studied over the past few years. Among others SC it is possible to grow pure Si or SiGe NW thanks to these techniques. Nevertheless Au could deteriorate the electric properties of SC and the use of other metal catalysts will be mandatory if NW are to be designed for innovating electronic. First this article s focus will be on SiGe NW s growth using Au catalyst. The authors managed to grow SiGe NW between 350 and 400 C. Ge concentration x in Si1-xGex NW has been successfully varied by modifying the gas flow ratio R GeH4 SiH4 GeH4 . Characterization by Raman spectroscopy and XRD revealed concentrations varying from to on NW grown at 375 C with R varying from to . Second the results of Si NW growths by CVD using alternatives catalysts such as platinum- palladium- and nickel-silicides are presented. This study carried out on a LPCVD furnace aimed at defining Si NW growth conditions when using such catalysts. Since the growth temperatures investigated are lower than the eutectic temperatures of these Si-metal alloys VSS growth is expected and observed. Different temperatures and HCl flow rates have been tested with the aim of minimizing 2D growth which induces an important tapering of the NW. Finally mechanical characterization of single NW .
