Tham khảo tài liệu 'organic light emitting diodeedited by marco mazzeosciyo part 3', kỹ thuật - công nghệ, cơ khí - chế tạo máy phục vụ nhu cầu học tập, nghiên cứu và làm việc hiệu quả | The efficient green emitting iridium III complexes and phosphorescent organic light emitting diode characteristics 29 the HOMO energy levels while methyl groups at the 3 - or 5 - positions effectively donate electrons to dmppy moiety. Fig. 4. Absorption and emission spectra of Ir 4 4 dmppy 3 triangles and Ir 5 4 dmppy 3 squares in CH2Cl2 at room temperature. Ir Complex UV-Vis Absorption nm e Emission max PL Redox E1 2 V Sol. Film Ir ppy 3 283 380 405 455 490 514 516 Ir 3 4 dmppy 3 284 384 408 455 493 522 529 Ir 4 4 dmppy 3 278 374 407 452 484 509 512 Ir 4 5 dmppy 3 284 391 414 456 493 524 534 Ir 5 4 dmppy 3 284 383 412 459 490 524 536 Ir 5 5 dmppy 3 284 384 414 458 497 524 532 Table 1. Photophysical and electrochemical data of Ir dmppy 3 complexes. Electroluminescence properties The phosphorescent organic light emitting diodes PHOLEDs based on Ir dmppy 3 complexes were fabricated by the vacuum deposition technique with the following configuration ITO copper phthalocyanine CuPc 10 nm as hole injection layer 4 4 -bis 1-naphthyl phenyl -amino -1 1 -biphenyl NPD 40 nm as hole transport layer CBP Ir dmppy 3 8 20 nm as emissive layer 2 9-dimethyl-4 7-diphenyl-1 10-phenanthroline BCP 10 nm as a hole blocking layer tris- 8-hydroxyquinoline aluminum Alq3 40 nm as an electron transport layer LiF 1 nm as electron injection layer Al 100 30 Organic Light Emitting Diode nm as cathode. All iridium complexes Ir 4 4 dmppy 3 Ir 4 5 dmppy 3 and Ir 5 4 dmppy 3 doped in 4 4 -bis 9-carbazolyl -1 1 -biphenyl CBP host were used as emissive layer for the devices and the devices performances were compared with that of a similar structured Ir ppy 3 based device. The device structure and molecular structures of the materials used in the devices are shown in Fig. 5. Fig. 5. Device structure and molecular .
