Organic Light Emitting Diodeedited by Marco MazzeoSCIYO Part 8

Tham khảo tài liệu 'organic light emitting diodeedited by marco mazzeosciyo part 8', kỹ thuật - công nghệ, cơ khí - chế tạo máy phục vụ nhu cầu học tập, nghiên cứu và làm việc hiệu quả | Solution Processable Ionic p-i-n Organic Light- Emitting Diodes 119 Fabrication of p-i-n PHOLEDs made by H-dipping For the fabrication of devices the PEDOT PSS and the organic EL layers were successively deposited by H-dipping on an ITO-coated glass substrate. The PEDOT PSS solution used was a mixture of 1 PEDOT PSS solution CLEVIOS P VP AI 4083 . Starck and isopropyl alcohol with a weight ratio of 2 1. The viscosity of the mixed PEDOT PSS solution measured by viscometer RVDV n Brookfield Inc. was about cp. For the blended EL solution we used TPD Bu-PBD Ir ppy 3 and PVK without further purification in mixed solvents of 1 2-dichloroethane and chloroform 3 1 . The organic salt Bu4NBF4 was also dissolved into the EL solution. The viscosity of the EL solution was about cp at a temperature of 25 C. The apparatus used for H-dipping had a maximum work space of 15 X 15 cm2. A small volume of the solution 6 pl per unit coating area 1 X 1 cm2 was fed into the gap between the cylindrical barrier SUS steel R mm and the glass substrate using a syringe pump Pump Systems Inc. NE-1000 . The height of the gap ho was adjusted vertically using two micrometer positioners and the carrying speed U was controlled using a computer-controlled translation stage SGSP26-200 Sigma Koki Co. Ltd . After a meniscus had formed on the solution the substrate was transported horizontally so that the barrier spread the solution on the transporting substrate. The transporting speed U was cm s. It took 2 seconds to prepare a complete film on a substrate with an area of X cm2. The H-dip-coated PEDOT PSS layer and electrophosphorescent EL layer doped with Bu4NBF4 were then dried using a heating plate at 110 C for 60 minutes and at 60 C for 5 minutes respectively in order to remove the remaining solvents. 1 nm CsF and 60 nm of Al were evaporated sequentially on the EL layer via thermal deposition nm s at a base pressure below 2 X 10-6 Torr. The PHOLED fabricated thus .

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