Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: Rapid thermal annealing and crystallization mechanisms study of silicon nanocrystal in silicon carbide matrix | Wan et al. Nanoscale Research Letters 2011 6 129 http content 6 1 129 o Nanoscale Research Letters a SpringerOpen Journal NANO EXPRESS Open Access Rapid thermal annealing and crystallization mechanisms study of silicon nanocrystal in silicon carbide matrix Zhenyu Wan Shujuan Huang Martin A Green Gavin Conibeer Abstract In this paper a positive effect of rapid thermal annealing RTA technique has been researched and compared with conventional furnace annealing for Si nanocrystalline in silicon carbide SiC matrix system. Amorphous Si-rich SiC layer has been deposited by co-sputtering in different Si concentrations 50 to approximately 80 v . Si nanocrystals Si-NC containing different grain sizes have been fabricated within the SiC matrix under two different annealing conditions furnace annealing and RTA both at 1 100 C. HRTEM image clearly reveals both Si and SiC-NC formed in the films. Much better degree of crystallization of Si-NC can be achieved in RTA than furnace annealing from the research of GIXRD and Raman analysis especially in high-Si-concentration situation. Differences from the two annealing procedures and the crystallization mechanism have been discussed based on the experimental results. Introduction Shockly and Queisser 1 have calculated the upper theoretical efficiency limitation for on p-n junction silicon solar cell as 30 . In order to further obtain a higher efficiency multi-junction solar cells with different materials have been designed and fabricated 2 . However to create different band gap solar cell layers expensive and perhaps toxic materials have to be involved and this is assumed to be the main obstacle for the wide use of multi-junction solar cell. As a result in recent years the theory of all silicon multi-junction solar cell has been developed 3 4 and silicon nanocrystals Si-NCs in various dielectric materials study have gained researchers interests in all silicon multi-junction solar cell applications 5 . Due to .
