Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: Impact of AFM-induced nano-pits in a-Si:H films on silicon crystal growth | Verveniotis et al. Nanoscale Research Letters 2011 6 145 http content 6 1 145 o Nanoscale Research Letters a SpringerOpen Journal NANO EXPRESS Open Access Impact of AFM-induced nano-pits in a-Si H films on silicon crystal growth Elisseos Verveniotis Bohuslav Rezek Emil Sipek Jiri Stuchlík Martin Ledinský Jan Kocka Abstract Conductive tips in atomic force microscopy AFM can be used to localize field-enhanced metal-induced solidphase crystallization FE-MISPC of amorphous silicon a-Si H at room temperature down to nanoscale dimensions. In this article the authors show that such local modifications can be used to selectively induce further localized growth of silicon nanocrystals. First a-Si H films by plasma-enhanced chemical vapor deposition on nickel glass substrates are prepared. After the FE-MISPC process yielding both conductive and non-conductive nano-pits in the films the second silicon layer at the boundary condition of amorphous and microcrystalline growth is deposited. Comparing AFM morphology and current-sensing AFM data on the first and second layers it is observed that the second deposition changes the morphology and increases the local conductivity of FE-MISPC-induced pits by up to an order of magnitude irrespective of their prior conductivity. This is attributed to the silicon nanocrystals 100 nm that tend to nucleate and grow inside the pits. This is also supported by micro-Raman spectroscopy. Introduction Crystallization of amorphous silicon a-Si H films is traditionally employed as an alternative method for producing large-area electronics such as displays and solar cells. It is typically induced by laser 1 or high-temperature furnace annealing 2 . The presence of silicide-forming metals such as nickel 3 or the application of an electric field 4 5 was found to reduce the crystallization temperature. Nowadays the production of silicon nanocrystals has become increasingly important as they are attractive for nanoelectronic .
