Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: Ultraviolet photodetectors based on ZnO nanorods-seed layer effect and metal oxide modifying layer effect | Zhou et al. Nanoscale Research Letters 2011 6 147 http content 6 1 147 o Nanoscale Research Letters a SpringerOpen Journal NANO EXPRESS Open Access Ultraviolet photodetectors based on ZnO nanorods-seed layer effect and metal oxide modifying layer effect Hai Zhou Guojia Fang Nishuang Liu Xingzhong Zhao Abstract Pt ZnO nanorod NR and Pt modified ZnO NR Schottky barrier ultraviolet UV photodetectors PDs were prepared with different seed layers and metal oxide modifying layer materials. In this paper we discussed the effect of metal oxide modifying layer on the performance of UV PDs pre- and post-deposition annealing at 300 C respectively. For Schottky barrier UV PDs with different seed layers the MgZnO seed layer-PDs without metal oxide coating showed bigger responsivity and larger detectivity D than those of PDs with ZnO seed layer and the reason was illustrated through energy band theory and the electron transport mechanism. Also the ratio of D254 to D546 was calculated above 8 X 102 for all PDs which demonstrated that our PDs showed high selectivity for detecting UV light with less influence of light with long wavelength. Introduction Recently a one-dimensional 1D nanomaterial has attracted a lot of attention both for fundamental research and potential nano-device applications because of its peculiar characteristics and quantum size effect 1 2 . Among the various nano-structured materials due to their direct and wide energy bandgap eV ZnO nanorods NRs are a promising functional material as potential candidates for short-wavelength optoelectronics applications such as nanoscale lasers 3 light-emitting diodes 4 and ultraviolet UV photodetectors PDs 5-9 . Although ZnO has many advantages the existence of many defects of ZnO NRs prepared by hydrothermal method 10 may benefit the formation of ohmic contacts at the electrode ZnO NRs interface which is an obstacle to applications in PDs due to its slow response and recovery behaviors. The .
