Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: Study of the formation processes of gold droplet arrays on Si substrates by high temperature anneals | Klimovskaya et al. Nanoscale Research Letters 2011 6 151 http content 6 1 151 o Nanoscale Research Letters a SpringerOpen Journal NANO EXPRESS Open Access Study of the formation processes of gold droplet arrays on Si substrates by high temperature anneals Alla Klimovskaya Andrey Sarikov Yury Pedchenko Andrey Voroshchenko Oksana Lytvyn Alexandr Stadnik Abstract In this study the peculiarities of the transformations of gold films deposited on the Si wafer surfaces as a result of high temperature anneals are investigated experimentally depending on the conditions of wafer surface preparation and the annealing regimes. The morphology and the distribution functions of the crystallites of gold films as well as the gold droplets formed as a result of anneals are studied as functions of annealing temperature type of annealing rapid thermal or rapid furnace annealing and the state of the surface of Si wafers. The results obtained can be used for the controlled preparation of the arrays of catalytic gold droplets for subsequent growth of Si wire-like crystals. Introduction Semiconductor Si wire-like crystals grown on Si substrates using the catalytic gold droplets have been studied since 1960 as prospective structures for the development of micro- and nano-electronic devices 1 . In the typical schema of the experiment the gold droplets are first formed on the Si substrates. The growth process proceeds with the inlet flow of reactive gas that consists of Si-containing molecules monosilane is a typical example into the growth chamber 2 3 . The preferential decomposition of reactive gas molecules and the silicon incorporation in the positions of droplets take place which cause the growth of elongated wirelike crystals diameters of which are determined by the diameters of droplets. The droplet caps remain on the top of wires to enable the continuous catalytic process of the decomposition of Si-containing reactive species from the gas phase the .
