Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: New Si-based multilayers for solar cell applications | Nalini et al. Nanoscale Research Letters 2011 6 156 http content 6 1 156 o Nanoscale Research Letters a SpringerOpen Journal NANO EXPRESS Open Access New Si-based multilayers for solar cell applications R. Pratibha Nalini Christian Dufour Julien Cardin Fabrice Gourbilleau Abstract In this article we have fabricated and studied a new multilayer structure Si-SiO2 SiNx by reactive magnetron sputtering. The comparison between SiO2 and SiNx host matrices in the optical properties of the multilayers is detailed. Structural analysis was made on the multilayer structures using Fourier transform infrared spectroscopy. The effect of specific annealing treatments on the optical properties is studied and we report a higher visible luminescence with a control over the thermal budget when SiO2 is replaced by the SiNx matrix. The latter seems to be a potential candidate to replace the most sought SiO2 host matrix. Introduction The third generation of solar cells aims at reducing the cost and at improving the efficiency. Thin film solar cells based on silicon nanostructures is one of the most researched system to achieve such a target 1-3 . Ever since the discovery of the visible luminescence of the porous Si by Canham 4 various research groups have exploited the room temperature photoluminescent nature of silicon by fabricating different kinds of Si-based nanostructures. The luminescence is attributed to the quantum confinement of carrier in Si-nanoclusters Si-nc 5-8 . Among the methods of obtaining the Si nanostructures we cite electrochemical etching 4 9 fabrication of silicon dots by plasma sputtering technique 10 and multilayer approach 8 11 12 . The important part of the ongoing research involves Si-nc embedded in an amorphous matrix such as SiO2 SiNx or amorphous silicon. Though Si-nc embedded in SiO2 is the most common structure the problem of carrier injection in this matrix comes as a major drawback owing to the large band gap of SiO2. Hence the
