Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: Lateral Ordering of InAs Quantum Dots on Cross-hatch Patterned GaInP | Nanoscale Res Lett 2010 5 1892-1896 DOI s11671-010-9747-2 SPECIAL ISSUE ARTICLE Lateral Ordering of InAs Quantum Dots on Cross-hatch Patterned GaInP Teemu Hakkarainen Andreas Schramm Antti Tukiainen Risto Ahorinta Lauri Toikkanen Mircea Guina Received 19 June 2010 Accepted 6 August 2010 Published online 20 August 2010 The Author s 2010. This article is published with open access at Abstract We report the use of partially relaxed tensile as well as compressively strained GaInP layers for lateral ordering of InAs quantum dots with the aid of misfit dislocation networks. The strained layers and the InAs QDs were characterized by means of atomic force microscopy scanning electron microscopy and X-ray reciprocal space mapping. The QD-ordering properties of compressive GaInP are found to be very similar with respect to the use of compressive GaInAs while a significantly stronger ordering of QDs was observed on tensile GaInP. Furthermore we observed a change of the major type of dislocation in GaInP layers as the growth temperature was modified. Keywords Molecular beam epitaxy III-V semiconductors Quantum dots Ordering InAs GaInP Introduction The fabrication of high-quality coherently strained quantum dots QDs is necessary for numerous electronic and photonic applications. Self-assembled QDs obtained from the Stranski-Krastanov SK growth mode fulfill the quality requirements for fabrication of devices such as QD-based laser diodes and detectors. A disadvantage of the selforganizing SK growth is that the QDs are randomly distributed. Ability to create ordered QD structures . deterministically positioned QDs is essential for enabling T. Hakkarainen A. Schramm A. Tukiainen R. Ahorinta L. Toikkanen M. Guina Optoelectronics Research Centre Tampere University of Technology Korkeakoulunkatu 3 33720 Tampere Finland e-mail new optical and electronic applications such as singlephoton emitters single-electron transistors or .
