Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: In-Type Doping of Vapor–Liquid–Solid Grown GaAs Nanowires | Gutsche et al. Nanoscale Res Lett 2011 6 65 http content 6 1 65 o Nanoscale Research Letters a SpringerOpen Journal NANO EXPRESS Open Access n-Type Doping of Vapor-Liquid-Solid Grown GaAs Nanowires Christoph Gutsche Andrey Lysov Ingo Regolin Kai Blekker Werner Prost Franz-Josef Tegude Abstract In this letter n-type doping of GaAs nanowires grown by metal-organic vapor phase epitaxy in the vapor-liquid-solid growth mode on 111 B GaAs substrates is reported. A low growth temperature of 400 C is adjusted in order to exclude shell growth. The impact of doping precursors on the morphology of GaAs nanowires was investigated. Tetraethyl tin as doping precursor enables heavily n-type doped GaAs nanowires in a relatively small process window while no doping effect could be found for ditertiarybutylsilane. Electrical measurements carried out on single nanowires reveal an axially non-uniform doping profile. Within a number of wires from the same run the donor concentrations ND of GaAs nanowires are found to vary from 7 X 1017 cm-3 to 2 X 1018 cm-3. The n-type conductivity is proven by the transfer characteristics of fabricated nanowire metal-insulator-semiconductor field-effect transistor devices. Introduction Novel quasi one-dimensional structures like III-V semiconductor nanowires may act as key elements in future nanoscaled optoelectronic devices 1-3 . They offer intriguing electrical and optoelectronic properties and the ability to combine material systems that are impossible in conventional semiconductor layer growth due to lattice mismatch issues 4 . The large surface to volume ratio which is already utilized in nanowire sensor applications 5 6 allows to improve light extraction and light collections when compared to planar devices making especially nanowires ideal candidates for light emitters and photo voltaics 7-9 . However the future of any semiconductor nanowire technology will inherently rely on their doping capability. Only this way the .
