Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: A general lithography-free method of micro/nanoscale fabrication and patterning on Si and Ge surfaces | Nanoscale Research Letters SpringerOpen0 This Provisional PDF corresponds to the article as it appeared upon acceptance. Fully formatted PDF and full text HTML versions will be made available soon. A general lithography-free method of micro nanoscale fabrication and patterning on Si and Ge surfaces Nanoscale Research Letters 2012 7 110 doi 1556-276X-7-110 Huatao Wang wanghuatao1@ Tom Wu tomwu@ ISSN 1556-276X Article type Nano Express Submission date 25 November 2011 Acceptance date 8 February 2012 Publication date 8 February 2012 Article URL http content 7 1 110 This peer-reviewed article was published immediately upon acceptance. It can be downloaded printed and distributed freely for any purposes see copyright notice below . Articles in Nanoscale Research Letters are listed in PubMed and archived at PubMed Central. For information about publishing your research in Nanoscale Research Letters go to http authors instructions For information about other SpringerOpen publications go to http 2012 Wang and Wu licensee Springer. This is an open access article distributed under the terms of the Creative Commons Attribution License http licenses by which permits unrestricted use distribution and reproduction in any medium provided the original work is properly cited. A general lithography-free method of microscale nanoscale fabrication and patterning on Si and Ge surfaces Huatao Wang1 2 and Tom Wu 1 1Division of Physics and Applied Physics School of Physical and Mathematical Sciences Nanyang Technological University Singapore 637371 Singapore 2School of Materials Science and Engineering Harbin Institute of Technology in Weihai Weihai 264209 China Corresponding author tomwu@ Email addresses HW wanghuatao1@ TW tomwu@ Abstract Here we introduce and give an overview of a general lithography-free method to fabricate silicide and
