báo cáo hóa học:" Effect of self-assembled InAs islands on the interfacial roughness of optical switched resonant tunneling diode"

Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: Effect of self-assembled InAs islands on the interfacial roughness of optical switched resonant tunneling diode | Nanoscale Research Letters SpringerOpen0 This Provisional PDF corresponds to the article as it appeared upon acceptance. Fully formatted PDF and full text HTML versions will be made available soon. Effect of self-assembled InAs islands on the interfacial roughness of optical switched resonant tunneling diode Nanoscale Research Letters 2012 7 128 doi 1556-276X-7-128 Haitao Tian etianhaitao@ Lu Wang lwang@ Zhenwu Shi zhenwushi@ Huaiju Gao gege3272@ Shuhui Zhang zhangshuhui2008@ Wenxin Wang wxwang@ Hong Chen hchen@ ISSN 1556-276X Article type Original paper Submission date 19 September 2011 Acceptance date 14 February 2012 Publication date 14 February 2012 Article URL http content 7 1 128 This peer-reviewed article was published immediately upon acceptance. It can be downloaded printed and distributed freely for any purposes see copyright notice below . Articles in Nanoscale Research Letters are listed in PubMed and archived at PubMed Central. For information about publishing your research in Nanoscale Research Letters go to http authors instructions For information about other SpringerOpen publications go to http 2012 Tian et al. licensee Springer. This is an open access article distributed under the terms of the Creative Commons Attribution License http licenses by which permits unrestricted use distribution and reproduction in any medium provided the original work is properly cited. Effect of self-assembled InAs islands on the interfacial roughness of optical-switched resonant tunneling diode Haitao Tian1 2 Lu Wang 1 Zhenwu Shi1 Huaiju Gao1 2 Shuhui Zhang1 Wenxin Wang1 and Hong Chen1 1Beijing National Laboratory of Condensed Matter Physics Institute of Physics Chinese Academy of Sciences 3rd South Street Zhongguancun Haidian District Beijing 100190 People s Republic of China Engineering Research .

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