Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: Research Growth of Comb-like ZnO Nanostructures for Dye-sensitized Solar Cells Applications | Nanoscale Res Lett 2009 4 1004-1008 DOI S11671-009-9353-3 NANO EXPRESS Growth of Comb-like ZnO Nanostructures for Dye-sensitized Solar Cells Applications Ahmad Umar Received 20 April 2009 Accepted 14 May 2009 Published online 29 May 2009 to the authors 2009 Abstract Dye-sensitized solar cells DSSCs were fabricated by using well-crystallized ZnO nanocombs directly grown onto the fluorine-doped tin oxide FTO via non-catalytic thermal evaporation process. The thin films of as-grown ZnO nanocombs were used as photoanode materials to fabricate the DSSCs which exhibited an overall light to electricity conversion efficiency of with a fill factor of 34 short-circuit current of mA cm2 and opencircuit voltage of V. To the best of our knowledge this is first report in which thin film of ZnO nanocombs was used as photoanode materials to fabricate the DSSCs. Keywords ZnO Nanocombs Dye-sensitized solar cells Structural and optical properties Introduction The II-VI semiconductor ZnO is one of the most important multifunctional materials due to its various exotic properties such as direct wide band gap eV and high optical gain of 300 cm-1 100 cm-1 for GaN at room temperature large saturation velocity X 107 cm s high breakdown voltage large exciton binding energy 60 meV piezoelectric biocompatibility and so on 112 . ZnO can be used in variety of high-technological practical applications such as ultraviolet UV lasers lightemitting diodes photodetectors piezoelectric transducers and actuators hydrogen storage chemical and biosensors surface acoustic wave guides solar cells photocatalysts etc. 1-24 . Among various applications the use of ZnO nanomaterials as photoelectrodes for the fabrication of dye-sensitized solar cells DSSCs has received a great attention due to its compatibility and higher electronic mobility with TiO2 nanomaterials and similar electron affinity and band gap eV at 298 K 17 . Therefore some ZnO nanostructures have been used as
