Báo cáo hóa học: "Alloying and Strain Relaxation in SiGe Islands Grown on Pit-Patterned Si(001) Substrates Probed by Nanotomography"

Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: Research Alloying and Strain Relaxation in SiGe Islands Grown on Pit-Patterned Si(001) Substrates Probed by Nanotomography | Nanoscale Res Lett 2009 4 1073-1077 DOI s11671-009-9360-4 NANO EXPRESS Alloying and Strain Relaxation in SiGe Islands Grown on Pit-Patterned Si 001 Substrates Probed by Nanotomography F. Pezzoli M. Stoffel T. Merdzhanova A. Rastelli O. G. Schmidt Received 30 April 2009 Accepted 24 May 2009 Published online 6 June 2009 to the authors 2009 Abstract The three-dimensional composition profiles of individual SiGe Si 001 islands grown on planar and pit-patterned substrates are determined by atomic force microscopy AFM -based nanotomography. The observed differences in lateral and vertical composition gradients are correlated with the island morphology. This approach allowed us to employ AFM to simultaneously gather information on the composition and strain of SiGe islands. Our quantitative analysis demonstrates that for islands with a fixed aspect ratio a modified geometry of the substrate provides an enhancement of the relaxation finally leading to a reduced intermixing. Keywords SiGe Island Alloying Wet etching Tomography AFM Lateral ordering Introduction The lattice mismatch between Si and Ge drives the formation of SiGe quantum dots QD during strained layer F. Pezzoli H M. Stoffel A. Rastelli O. G. Schmidt Institute for Integrative Nanosciences IFW Dresden HelmholtzstraBe 20 01069 Dresden Germany e-mail A. Rastelli e-mail Present Address M. Stoffel Institut fur Halbleitertechnik Pfaffenwaldring 47 70569 Stuttgart Germany T. Merdzhanova Max-Planck-Institut fur Festkorperforschung HeisenbergstraBe 1 70569 Stuttgart Germany heteroepitaxy 1 2 . For large-scale integration technologies 3 the position of such islands needs to be accurately controlled on the substrate surface 4 . A viable process relies on the fabrication of lithographically defined pits which act as a sink for the deposited adatoms allowing the exact positioning and addressability of individual QDs. In addition a precise control of the chemical .

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