Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: Research Fabrication of Densely Packed AlN Nanowires by a Chemical Conversion of Al2O3 Nanowires Based on Porous Anodic Alumina Film | Nanoscale Res Lett 2009 4 1126-1129 DOI s11671-009-9368-9 NANO EXPRESS Fabrication of Densely Packed AlN Nanowires by a Chemical Conversion of Al2O3 Nanowires Based on Porous Anodic Alumina Film Zhi-Hao Yuan Shao-Qing Sun Yue-Qin Duan Da-Jian Wang Received 2 March 2009 Accepted 28 May 2009 Published online 12 June 2009 to the authors 2009 Abstract Porous alumina film on aluminum with gel-like pore wall was prepared by a two-step anodization of aluminum and the corresponding gel-like porous film was etched in diluted NaOH solution to produce alumina nanowires in the form of densely packed alignment. The resultant alumina nanowires were reacted with NH3 and evaporated aluminum at an elevated temperature to be converted into densely packed aluminum nitride AlN nanowires. The AlN nanowires have a diameter of 1520 nm larger than that of the alumina nanowires due to the supplement of the additional evaporated aluminum. The results suggest that it might be possible to prepare other aluminum compound nanowires through similar process. Keywords Aluminum nitride Alumina Nanowire Chemical converting Porous film . Yuan . Sun . Duan Nanomaterials Nanotechnology Research Center Tianjin University of Technology 300384 Tianjin China e-mail zhyuan@ zhyuan@ . Wang Institute of Materials Physics Tianjin University of Technology 300384 Tianjin China e-mail dajian@ . Yuan Tianjin Key Lab for Photoelectric Materials Devices 300384 Tianjin China . Wang Key Laboratory of Display Materials Photoelectronic Devices Tianjin University of Technology Ministry of Education 300384 Tianjin China Introduction In past few decades aluminum nitride AlN has attracted considerable interests because of its exceptional mechanical thermal electrical and optical properties 1-4 . For example its good thermal conductivity low dielectric constant and high electrical resistance as well as thermal expansion coefficient matching to that of .