Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: Photovoltaic Properties of p-Doped GaAs Nanowire Arrays Grown on n-Type GaAs(111)B Substrate | Nanoscale Res Lett 2010 5 360-363 DOI S11671-009-9488-2 NANO EXPRESS Photovoltaic Properties of p-Doped GaAs Nanowire Arrays Grown on n-Type GaAs 111 B Substrate G. E. Cirlin A. D. Bouravleuv I. P. Soshnikov Yu. B. Samsonenko V. G. Dubrovskii E. M. Arakcheeva E. M. Tanklevskaya P. Werner Received 5 October 2009 Accepted 30 October 2009 Published online 14 November 2009 to the authors 2009 Abstract We report on the molecular beam epitaxy growth of Au-assisted GaAs p-type-doped NW arrays on the n-type GaAs 111 B substrate and their photovoltaic properties. The samples are grown at different substrate temperature within the range from 520 to 580 C. It is shown that the dependence of conversion efficiency on the substrate temperature has a maximum at the substrate temperature of 550 C. For the best sample the conversion efficiency of and the fill factor of 25 are obtained. Keywords Molecular beam epitaxy Nanowires GaAs Solar cells Photovoltaic properties Introduction Aligned NW arrays are very promising building blocks for various nanoelectronic devices such as nanolasers 1 2 G. E. Cirlin El Yu. B. Samsonenko Institute for Analytical Instrumentation RAS Rizhsky 26 190103 Russia e-mail cirlin@ G. E. Cirlin A. D. Bouravleuv I. P. Soshnikov Yu. B. Samsonenko V. G. Dubrovskii Physics and Technology Centre for Research and Education RAS Khlopina 8 3 194021 Russia G. E. Cirlin A. D. Bouravleuv I. P. Soshnikov Yu. B. Samsonenko V. G. Dubrovskii E. M. Arakcheeva E. M. Tanklevskaya Ioffe Physical Technical Institute RAS Politekhnicheskaya 26 194021 Russia P. Werner Max Planck Institute for Microstructure Physics Weinberg 2 06120 Halle Saale Germany field-effect transistors 3 light-emitting diodes 4 5 and field emitters 6 7 . Compared to polycrystalline films vertically oriented NW arrays are particularly advantageous for photovoltaic PV application because the oriented geometry provides direct
