Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: Fabrication of Antireflective Sub-Wavelength Structures on Silicon Nitride Using Nano Cluster Mask for Solar Cell Application | Nanoscale Res Lett 2009 4 680-683 DOI S11671-009-9297-7 NANO EXPRESS Fabrication of Antireflective Sub-Wavelength Structures on Silicon Nitride Using Nano Cluster Mask for Solar Cell Application Kartika Chandra Sahoo Men-Ku Lin Edward-Yi Chang Yi-Yao Lu Chun-Chi Chen Jin-Hua Huang Chun-Wei Chang Received 7 February 2009 Accepted 5 March 2009 Published online 22 April 2009 to the authors 2009 Abstract We have developed a simple and scalable approach for fabricating sub-wavelength structures SWS on silicon nitride by means of self-assembled nickel nanoparticle masks and inductively coupled plasma ICP ion etching. Silicon nitride SWS surfaces with diameter of 160-200 nm and a height of 140-150 nm were obtained. A low reflectivity below 1 was observed over wavelength from 590 to 680 nm. Using the measured reflectivity data in PC1D the solar cell characteristics has been compared for single layer anti-reflection SLAR coatings and SWS and a improvement in efficiency has been seen. Keywords Sub-wavelength Structure Solar cell SWS fabrication Reflectance Anti-reflective coatings Introduction The antireflection coating has become a key feature for solar cell design 1-4 . Many researchers have investigated double-layer antireflection DLAR coatings because single-layer antireflection coatings SLAR are not able to cover a broad range of the solar spectrum 5 6 . K. C. Sahoo . Chang H . Lu . Chen Department of Materials Science and Engineering National Chiao Tung University Hsinchu Taiwan e-mail edc@ . Lin . Huang Department of Materials Science and Engineering National Tsing Hua University Hsinchu Taiwan . Chang Taiwan Semiconductor Manufacturing Company Ltd Hsinchu Taiwan Unfortunately multilayer ARCs are expensive to fabricate owing to the stringent requirement of high vacuum material selection and layer thickness control. Additionally thermal mismatch induced lamination and material diffusion of the multilayer ARCs limit .
