Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: ntense Red Catho- and Photoluminescence from 200 nm Thick Samarium Doped Amorphous AlN Thin Films | Nanoscale Res Lett 2009 4 748-752 DOI S11671-009-9309-7 NANO EXPRESS Intense Red Catho- and Photoluminescence from 200 nm Thick Samarium Doped Amorphous AlN Thin Films Muhammad Maqbool Tariq Ali Received 21 January 2009 Accepted 2 April 2009 Published online 25 April 2009 to the authors 2009 Abstract Samarium Sm doped aluminum nitride AlN thin films are deposited on silicon 100 substrates at 77 K by rf magnetron sputtering method. Thick films of 200 nm are grown at 100-200 watts RF power and 5-8 m Torr nitrogen using a metal target of Al with Sm. X-ray diffraction results show that films are amorphous. Cathodoluminescence CL studies are performed and four peaks are observed in Sm at 564 600 648 and 707 nm as a result of 4G5 2 6H5 2 4G5 2 6H7 2 4G5 2 6H9 2 and 4G5 2 6H11 2 transitions. Photoluminescence PL provides dominant peaks at 600 and 707 nm while CL gives the intense peaks at 600 nm and 648 nm respectively. Films are thermally activated at 1 200 K for half an hour in a nitrogen atmosphere. Thermal activation enhances the intensity of luminescence. Keywords Cathodoluminescence Photoluminescence Thermal activation XRD Samarium AlN Introduction Rear-earth doped nitride semiconductors thin films are attracting increasing attention as phosphor materials and are used for optical displays 1-5 . Sputter deposited AlN has been shown to be a viable host for luminescent rare earth RE ions due to its transparency over a wide range M. Maqbool El Department of Physics and Astronomy Ball State University Muncie IN 47306 USA e-mail mmaqbool@ T. Ali Department of Physics State University of New York at Buffalo Buffalo NY 14260 USA including the UV IR and entire visible range 6-17 . Recent progress toward nitride-based light-emitting diode and electroluminescent devices ELDs has been made using crystalline and amorphous AlN doped with a variety of rare-earth elements 1-9 . The electronic structure of the RE ions differ from the other elements and are .
