Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: Evolution of Wurtzite Structured GaAs Shells Around InAs Nanowire Cores | Nanoscale Res Lett 2009 4 846-849 DOI S11671-009-9326-6 NANO EXPRESS Evolution of Wurtzite Structured GaAs Shells Around InAs Nanowire Cores M. Paladugu J. Zou Y. N. Guo X. Zhang H. J. Joyce Q. Gao H. H. Tan C. Jagadish Y. Kim Received 20 January 2009 Accepted 22 April 2009 Published online 6 May 2009 to the authors 2009 Abstract GaAs was radially deposited on InAs nanowires by metal-organic chemical vapor deposition and resultant nanowire heterostructures were characterized by detailed electron microscopy investigations. The GaAs shells have been grown in wurtzite structure epitaxially on the wurtzite structured InAs nanowire cores. The fundamental reason of structural evolution in terms of material nucleation and interfacial structure is given. Keywords Nanowire heterostructures GaAs InAs Crystal structure Introduction Semiconductor nanowires and their associated heterostructures are ideal candidates to achieve one-dimensional quantum confinement in materials and thereby they are ideal candidates to explore the physical properties of M. Paladugu J. Zou Y. N. Guo X. Zhang School of Engineering The University of Queensland Brisbane QLD 4072 Australia J. Zou Centre for Microscopy and Microanalysis The University of Queensland Brisbane QLD 4072 Australia e-mail H. J. Joyce Q. Gao H. H. Tan C. Jagadish Department of Electronic Materials Engineering Research School of Physics and Engineering The Australian National University Canberra ACT 0200 Australia Y. Kim Department of Physics Dong-A University Hadan-2-dong Sahagu Busan 604-714 Korea materials in one-dimension 1 2 . Promising physical properties and wide variety of applications were demonstrated using these semiconductor nanostructures 1 2 . Many nanowire based devices have been demonstrated including nanowire diodes 3 photodiodes 4 singleelectron transistors 5 and field-effect transistors 6 7 . Various mechanisms have been used to synthesize these semiconductor nanowires such as .
