Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: Considerable Enhancement of Field Emission of SnO2 Nanowires by Post-Annealing Process in Oxygen at High Temperature | Nanoscale Res Lett 2009 4 1135-1140 DOI S11671-009-9367-X NANO EXPRESS Considerable Enhancement of Field Emission of SnO2 Nanowires by Post-Annealing Process in Oxygen at High Temperature J. B. Wang K. Li X. L. Zhong Y. C. Zhou X. S. Fang C. C. Tang Y. Bando Received 13 February 2009 Accepted 28 May 2009 Published online 24 June 2009 to the authors 2009 Abstract The field emission properties of SnO2 nanowires fabricated by chemical vapor deposition with metallic catalyst-assistance were investigated. For the as-fabricated SnO2 nanowires the turn-on and threshold field were and V m respectively. Considerable enhancement of field emission of SnO2 nanowires was obtained by a post-annealing process in oxygen at high temperature. When the SnO2 nanowires were postannealed at 1 000 C in oxygen the turn-on and threshold field were decreased to and V m respectively and the current density was increased to from mA cm2 at the same applied electric field of V m. Keywords SnO2 nanowires Chemical vapor deposition Field emission Annealing Introduction SnO2 is an important n type wide-band gap . eV at 300 K semiconducting material which exhibits extensive applications in the fields of gas sensors transparent conducting electrodes transistors electrode materials J. B. Wang H K. Li X. L. Zhong Y. C. Zhou Institute of Modern Physics Xiangtan University 411105 Xiangtan Hunan China e-mail jbwang@ J. B. Wang K. Li X. L. Zhong Y. C. Zhou Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education Xiangtan University 411105 Xiangtan Hunan China X. S. Fang C. C. Tang Y. Bando Nanoscale Materials Center National Institute for Materials Science Tsukuba 3050047 Japan catalysis solar cells and optoelectronic devices 1-5 . Recently various SnO2 nanostructures 6-9 have been proved to be promising candidates for field emission-based flat panel displays due to their characteristic properties of high .
