Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: Synthesis of Tapered CdS Nanobelts and CdSe Nanowires with Good Optical Property by Hydrogen-Assisted Thermal Evaporation | Nanoscale Res Lett 2009 4 1166-1170 DOI S11671-009-9376-9 NANO EXPRESS Synthesis of Tapered CdS Nanobelts and CdSe Nanowires with Good Optical Property by Hydrogen-Assisted Thermal Evaporation Min Wang Guang Tao Fei Received 7 February 2009 Accepted 9 June 2009 Published online 10 July 2009 to the authors 2009 Abstract The tapered CdS nanobelts and CdSe nanowires were prepared by hydrogen-assisted thermal evaporation method. Different supersaturation leads to two different kinds of 1D nanostructures. The PL measurements recorded from the as-prepared tapered CdS nanobelts and CdSe nanowires show only a bandgap emission with relatively narrow full-width half maximum which means that they possess good optical property. The as-synthesized high-quality tapered CdS nanobelts and CdSe nanowires may be excellent building blocks for photonic devices. Keywords Nanomaterials II-VI semiconductors Chemical vapor deposition Vapor-liquid-solid Photoluminescence Introduction One-dimensional 1D nanostructures such as nanowires nanorods nanobelts and nanotubes have become the focus M. Wang G. T. Fei H Key Laboratory of Materials Physics Institute of Solid State Physics Hefei Institutes of Physical Science Chinese Academy of Sciences . Box 1129 230031 Hefei People s Republic of China e-mail gtfei@ M. Wang G. T. Fei Anhui Key Laboratory of Nanomaterials and Nanostructures Institute of Solid State Physics Hefei Institutes of Physical Science Chinese Academy of Sciences . Box 1129 230031 Hefei People s Republic of China of intensive research owing to their novel physical properties and applications in the fabrication of nanoscale devices 1 . In particular considerable efforts have been made to synthesize 1D II-VI semiconductors and investigate their electronic and optical properties because of their wide applications in optoelectronic devices such as lasers 2 3 . In order to achieve their full potential in optical applications it is essential to prepare 1D II-VI