Báo cáo hóa học: " Synthesis and Characterization of ZnO Nanowire–CdO Composite Nanostructure"

Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: Synthesis and Characterization of ZnO Nanowire–CdO Composite Nanostructure | Nanoscale Res Lett 2009 4 1329-1334 DOI s11671-009-9401-z NANO EXPRESS Synthesis and Characterization of ZnO Nanowire-CdO Composite Nanostructures Karuppanan Senthil Youngjo Tak Minsu Seol Kijung Yong Received 1 June 2009 Accepted 17 July 2009 Published online 30 July 2009 to the authors 2009 Abstract ZnO nanowire-CdO composite nanostructures were fabricated by a simple two-step process involving ammonia solution method and thermal evaporation. First ZnO nanowires NWs were grown on Si substrate by aqueous ammonia solution method and then CdO was deposited on these ZnO NWs by thermal evaporation of cadmium chloride powder. The surface morphology and structure of the synthesized composite structures were analyzed by scanning electron microscopy X-ray diffraction and transmission electron microscopy. The optical absorbance spectrum showed that ZnO NW-CdO composites can absorb light up to 550 nm. The photoluminescence spectrum of the composite structure does not show any CdO-related emission peak and also there was no band gap modification of ZnO due to CdO. The photocurrent measurements showed that ZnO NW-CdO composite structures have better photocurrent when compared with the bare ZnO NWs. Keywords Zinc oxide Cadmium oxide Nanowires Composites Optical absorbance K. Senthil Center for Information Materials Pohang University of Science and Technology POSTECH San 31 Hyoja-dong Nam-gu Pohang 790-784 South Korea Y. Tak M. Seol K. Yong H Department of Chemical Engineering Pohang University of Science and Technology POSTECH San 31 Hyoja-dong Nam-gu Pohang 790-784 South Korea e-mail kyong@ Introduction Zinc oxide ZnO is one of the most important materials for the optoelectronic applications because of its wide band gap eV and high-exciton binding energy 60 meV that is much larger than other semiconductor materials such as ZnSe 22 meV and GaN 25 meV . ZnO nanostructures have been extensively investigated in the past decade due to their interesting .

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