Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: Structural Analysis of Highly Relaxed GaSb Grown on GaAs Substrates with Periodic Interfacial Array of 90° Misfit Dislocations | Nanoscale Res Lett 2009 4 1458-1462 DOI s11671-009-9420-9 NANO EXPRESS Structural Analysis of Highly Relaxed GaSb Grown on GaAs Substrates with Periodic Interfacial Array of 90o Misfit Dislocations A. Jallipalli G. Balakrishnan S. H. Huang T. J. Rotter K. Nunna B. L. Liang L. R. Dawson D. L. Huffaker Received 24 June 2009 Accepted 12 August 2009 Published online 30 August 2009 to the authors 2009 Abstract We report structural analysis of completely relaxed GaSb epitaxial layers deposited monolithically on GaAs substrates using interfacial misfit IMF array growth mode. Unlike the traditional tetragonal distortion approach strain due to the lattice mismatch is spontaneously relieved at the heterointerface in this growth. The complete and instantaneous strain relief at the GaSb GaAs interface is achieved by the formation of a two-dimensional Lomer dislocation network comprising of pure-edge 90 dislocations along both 110 and 1-10 . In the present analysis structural properties of GaSb deposited using both IMF and non-IMF growths are compared. Moire fringe patterns along with X-ray diffraction measure the long-range uniformity and strain relaxation of the IMF samples. The proof for the existence of the IMF array and low threading dislocation density is provided with the help of transmission electron micrographs for the GaSb epitaxial layer. Our results indicate that the IMF-grown GaSb is completely A. Jallipalli H D. L. Huffaker Electrical Engineering Department University of California at Los Angeles Los Angeles CA 90095 USA e-mail anitha@ D. L. Huffaker e-mail huffaker@ G. Balakrishnan T. J. Rotter L. R. Dawson Center for High Technology Materials University of New Mexico Albuquerque NM 87106 USA S. H. Huang Department of Earth and Planetary Sciences University of New Mexico Albuquerque NM 87131 USA K. Nunna B. L. Liang D. L. Huffaker California NanoSystems Institute University of California at Los Angeles Los Angeles CA 90095 USA .
