Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: Hierarchical Cd4SiS6/SiO2 Heterostructure Nanowire Arrays | Nanoscale Res Lett 2010 5 231-236 DOI s11671-009-9470-z NANO EXPRESS Hierarchical Cd4SiS6 SiO2 Heterostructure Nanowire Arrays Jian Liu Chunrui Wang Qingqing Xie Junsheng Cai Jing Zhang Received 1 August 2009 Accepted 14 October 2009 Published online 29 October 2009 to the authors 2009 Abstract Novel hierarchical Cd4SiS6 SiO2 based heterostructure nanowire arrays were fabricated on silicon substrates by a one-step thermal evaporation of CdS powder. The as-grown products were characterized using scanning electron microscopy X-ray diffraction and transmission electron microscopy. Studies reveal that a typical hierarchical Cd4SiS6 SiO2 heterostructure nanowire is composed of a single crystalline Cd4SiS6 nanowire core sheathed with amorphous SiO2 sheath. Furthermore secondary nanostructures of SiO2 nanowires are highly dense grown on the primary Cd4SiS6 core-SiO2 sheath nanowires and formed hierarchical Cd4SiS6 SiO2 based heterostructure nanowire arrays which stand vertically on silicon substrates. The possible growth mechanism of hierarchical Cd4SiS6 SiO2 heterostructure nanowire arrays is proposed. The optical properties of hierarchical Cd4SiS6 SiO2 heterostructure nanowire arrays are investigated using Raman and Photoluminescence spectroscopy. Keywords Cd4SiS6 SiO2 Nanowire arrays Thermal evaporation Optical property Introduction One-dimensional 1D nanostructures with modulated compositions have recently become of particular interest with respect to potential applications in nanoscale building J. Liu C. Wang El Q. Xie J. Cai J. Zhang Department of Applied Physics and State Key Laboratory for Modification of Chemical Fibers and Polymer Materials Donghua University 2999 Renmin Rd. North 201620 Songjiang District Shanghai People s Republic of China e-mail crwang@ blocks of future optoelectronic devices and systems 1-3 . Among them core shell or sheath nanostructure materials can prevent oxidation of semiconductor 1D nanostructures and thus forestall .
