Báo cáo hóa học: " SiC Nanowires Synthesized by Rapidly Heating a Mixture of SiO and Arc-Discharge Plasma Pretreated Carbon Black"

Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: SiC Nanowires Synthesized by Rapidly Heating a Mixture of SiO and Arc-Discharge Plasma Pretreated Carbon Black | Nanoscale Res Lett 2009 4 153-156 DOI s11671-008-9216-3 NANO EXPRESS SiC Nanowires Synthesized by Rapidly Heating a Mixture of SiO and Arc-Discharge Plasma Pretreated Carbon Black Feng-Lei Wang Li-Ying Zhang Ya-Fei Zhang Received 17 September 2008 Accepted 11 November 2008 Published online 22 November 2008 to the authors 2008 Abstract SiC nanowires have been synthesized at 1 600 C by using a simple and low-cost method in a high-frequency induction furnace. The commercial SiO powder and the arc-discharge plasma pretreated carbon black were mixed and used as the source materials. The heating-up and reaction time is less than half an hour. It was found that most of the nanowires have core-shell SiC SiO2 nanostructures. The nucleation precipitation and growth processes were discussed in terms of the oxide-assisted cluster-solid mechanism. Keywords Silicon carbide Nanowires Induction heating Introduction Silicon carbide SiC has been widely used in the fields of electronic and optic devices due to its unique properties such as a wide band gap of eV high strength and Young s modulus good resistance to oxidation and corrosion excellent thermal conductivity and electron mobility 1-4 . One-dimensional 1D SiC materials . nanowires nanofibers nanorods and nanocables have recently attracted much attention because they have been thought suitable for the fabrication of high temperature . Wang . Zhang . Zhang H National Key Laboratory of Nano Micro Fabrication Technology Key Laboratory for Thin Film and Microfabrication of the Ministry of Education Research Institute of Micro Nano Science and Technology Shanghai Jiao Tong University Shanghai 200240 People s Republic of China e-mail yfzhang@ high frequency and high power nanoscaled electronic devices 5-9 . The first successfully synthesis of 1D SiC nanowires was in 1995 by using carbon nanotube as a template 10 . Up to now lots of approaches have been developed for example arc-discharge 11

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