Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: Self-assembled GaInNAs/GaAsN quantum dot lasers: solid source molecular beam epitaxy growth and high-temperature operation | Nanoscale Res Lett 2006 1 20-31 DOI S11671-006-9009-5 NANO REVIEW Self-assembled GaInNAs GaAsN quantum dot lasers solid source molecular beam epitaxy growth and high-temperature operation S. F. Yoon C. Y. Liu Z. Z. Sun K. C. Yew Published online 26 July 2006 to the authors 2006 Abstract Self-assembled GaInNAs quantum dots QDs were grown on GaAs 001 substrate using solidsource molecular-beam epitaxy SSMBE equipped with a radio-frequency nitrogen plasma source. The GaInNAs QD growth characteristics were extensively investigated using atomic-force microscopy AFM photoluminescence PL and transmission electron microscopy TEM measurements. Self-assembled GaInNAs GaAsN single layer QD lasers grown using SSMBE have been fabricated and characterized. The laser worked under continuous wave CW operation at room temperature RT with emission wavelength of nm. Temperature-dependent measurements have been carried out on the GaInNAs QD lasers. The lowest obtained threshold current density in this work is kA cm2 from a GaInNAs QD laser 50 X 1 700 m2 at 10 C. High-temperature operation up to 65 C was demonstrated from an unbonded GaInNAs QD laser 50 X 1 060 m2 with high characteristic temperature of K in the temperature range of 10-60 C. Keywords GaInNAs Quantum dot Laser diodes Molecular beam epitaxy MBE S. F. Yoon El C. Y. Liu Z. Z. Sun K. C. Yew Compound Semiconductor and Quantum Information Group School of Electrical and Electronic Engineering Nanyang Technological University Nanyang Avenue Singapore 639798 Rep. of Singapore e-mail esfyoon@ Introduction Long-wavelength m or m semiconductor lasers are key devices for optical fiber communications and have attracted much attention in recent years due to their zero dispersion and minimal absorption in silica fibers. Nowadays nearly all commercialized semiconductor lasers operating at wavelength of m and m are made from the InGaAsP InP material system. The InGaAsP InP material .
