Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: Self-organization of quantum-dot pairs by high-temperature droplet epitaxy | Nanoscale Res Lett 2006 1 57-61 DOI s11671-006-9002-z NANO EXPRESS Self-organization of quantum-dot pairs by high-temperature droplet epitaxy Zhiming M. Wang Kyland Holmes Yuriy I. Mazur Kimberly A. Ramsey Gregory J. Salamo Published online 25 July 2006 to the authors 2006 Abstract The spontaneously formation of epitaxial GaAs quantum-dot pairs was demonstrated on an AlGaAs surface using Ga droplets as a Ga nanosource. The dot pair formation was attributed to the anisotropy of surface diffusion during high-temperature droplet epitaxy. Keywords Quantum dots Droplet epitaxy Self-assembly of epitaxial semiconductor nanostructures has been an intensive field of research. In particular the Stranski-Krastanov SK growth mode based on the use of lattice-mismatched materials has played an important role in the formation of nanostructures the investigation of quantum confinement effects and has made possible applications of nanostructures 1-3 . While the SK growth mode has been a very powerful and beautiful technique there has been Z. M. Wang El K. Holmes Y. I. Mazur K. A. Ramsey G. J. Salamo Department of Physics University of Arkansas Fayetteville AR 72701 USA e-mail zmwang@ a significant but perhaps less well-known parallel development using lattice matched materials as an alternative approach for the growth of nanostructures called droplet epitaxy 4-7 . Here liquid metal droplets are first formed as an intermediate growth step before being converted into semiconductor nanostructures. While the two growth approaches are very different both the SK and the droplet approach are similar in that they both suffer from the stochastic nature of self-assembly. As a result the control of spatial ordering of semiconductor nanostructures has been extremely challenging while desirable for applications such as the fabrication of quantum-dot QD molecules for quantum computing 8 . Consequently there has been much recent effort to control the lateral arrangement of QDs .
