A new type of semiconductor laser is studied, in which injected carriers in the active region are quantum mechanically confined in localized finite self-assembled wire-like quantumdash (Qdash) structures that are varied in sizes and compositions. Effects of such carrier distribution and quasi three-dimensional density of states contribute to a quasisupercontinuum interband lasing characteristics, which is a new laser design platform as compared to continuous broad emission spectrum generated by nonlinear media pumped with ultrashort laser pulse
