Silicon Carbide (SiC) and its polytypes have been a part of human civilization for a long time; the technical interest of this hard and stable compound has been realized in 1885 and 1892 by Cowless and Acheson for grinding and cutting purpose, leading to its manufacture on a large scale. The fundamental physical limitations of Si operation at higher temperature and power are the strongest motivations for switching to wide bandgap (WBG) semiconductors such as SiC for these applications.
