To provide an overview for manufacturing systems students of the steps and processes required to make intergrated circuits from blank silicon wafers. | Silicon Wafer Processing Dr. Seth P. Bates Applied Materials Summer 2000 Objective To provide an overview for manufacturing systems students of the steps and processes required to make integrated circuits from blank silicon wafers. Goals The Transfer Plan provides a curriculum covering the process of manufacturing integrated circuits from the silicon wafer blanks using the equipment manufactured by Applied Materials Lam Research and others of its competitors. The curriculum will be modular with each module covering a process in sequence. This curriculum will be developed for internet access. Outline Introduction Preparation of the Silicon Wafer Media Silicon Wafer Processing Steps Silicon Wafer Processing Outline of Contents Preparation of the Silicon Wafer Crystal Growth and Wafer Slicing Process Thickness Sorting Lapping Etching Processes Thickness Sorting and Flatness Checking Polishing Process Final Dimensional and Electrical Properties Qualification Silicon Wafer Processing Fabrication Diffusion Coat-Bake Align Develop Dry etch Wet etch clean Photolithography Implant Masking Steps Die Attach Wire Bond Encapsulation Lead Finish Trim and Form Final Testing Shipping Seth Bates SJSU Applied Materials IISME-ETP page 1 Introduction The processing of Silicon wafers to produce integrated circuits involves a good deal of chemistry and physics. In order to alter the surface conditions and properties it is necessary to use both inert and toxic chemicals specific and unusual conditions and to manipulate those conditions with both plasma-state elements and with RF Radio Frequency energies. Starting with thin round wafers of silicon crystal in diameters of 150 200 and 300mm the processes described here build up a succession of layers of materials and geometries to produce thousands of electronic devices at tiny sizes which together function as integrated circuits ICs . The devices which now occupy the surface of a one-inch square IC would have
