The photon - drag effect with optical phonon-electron scattering in rectangular quantum wire with an infinite potential is studied. Based on the quantum kinetic equation for electrons under the action of a linearly polarized electromagnetic wave, a dc electric field and an intense laser field, analytic expressions for the density of the direct current for the case of electron – optical phonon scattering are calculated. | VNU Journal of Science: Mathematics – Physics, Vol. 33, No. 1 (2017) 53-59 The Photon - Drag Effect in Rectangular Quantum Wire with An Infinite Potential Hoang Van Ngoc*, Nguyen Vu Nhan, Dinh Quoc Vuong Faculty of Physics, VNU University of Science, 334 Nguyen Trai, Hanoi, Vietnam Received 15 January 2017 Revised 26 February 2017; Accepted 20 March 2017 Abstract: The photon - drag effect with optical phonon-electron scattering in rectangular quantum wire with an infinite potential is studied. Based on the quantum kinetic equation for electrons under the action of a linearly polarized electromagnetic wave, a dc electric field and an intense laser field, analytic expressions for the density of the direct current for the case of electron – optical phonon scattering are calculated. The dependence of the direct current density on the frequency of the laser radiation field, the frequency of the linearly polarized electromagnetic wave, the size of the wire is obtained. The analytic expressions are numerically evaluated and plotted for a specific quantum wire, GaAs/AlGaAs. All these results of quantum wire are compared with bulk semiconductors and superlattices to show the differences. Keywords: The photon – drag effect; rectangular quantum wire; optical phonon; infinite potential; the density of the direct current. 1. Introduction The photon – drag effect by electromagnetic wave is explained by carriers absorb both energy and electromagnetic wave momentum, so electrons are generated with detected motion and a direct current arises in this direction, as well as for characterizing kinetic properties of semiconductors [1]. It is known that the presence of intense laser radiation can influence the electrical conductivity and kinetic effects in material [2-9]. In recent years [10 - 12], it has been revealed that the photon - drag effect in superlattices and in quantum wells should be characterized by new features under the action of strong fields. However, in quantum
