A theory is given of the mobility of a two-dimensional electron gas at high temperature in single-side square quantum wells. Within the variational approach, we obtain analytic expressions for the carrier distribution, and autocorrelation functions for various scattering mechanisms. We examine the dependence of the mobilities of carriers on the temperature. Our theory is able to well reproduce the recent experimental data on transport in 1S-doped square QWs, ., acoustic-phonon partial mobility dependence on temperature for single-side modulation doped square quantum wells. | VNU Journal of Science: Mathematics – Physics, Vol. 33, No. 2 (2017) 59-65 The Mobilities of Carriers Confined in a Single-side Doped Square Quantum Wells Dependence on Temperature Tran Thi Hai* Faculty of Nature Science, Hong Duc University, Thanh Hoa, Vietnam Received 17 April 2017 Revised 26 May 2017; Accepted 15 June 2017 Abstract: A theory is given of the mobility of a two-dimensional electron gas at high temperature in single-side square quantum wells. Within the variational approach, we obtain analytic expressions for the carrier distribution, and autocorrelation functions for various scattering mechanisms. We examine the dependence of the mobilities of carriers on the temperature. Our theory is able to well reproduce the recent experimental data on transport in 1S-doped square QWs, ., acoustic-phonon partial mobility dependence on temperature for single-side modulation doped square quantum wells. Keywords: Single-side (1S) doing, variational approach, mobility, square quantum wells. 1. Introduction Modulation doped quantum wells (QWs) have received enormous attention in recent years due to their importance in device applications. In order to upgrade the electron mobility of modulation doped quantum wells, one needs to identify the key scattering mechanisms limiting the transport properties of their two-dimensional electron gas (2DEG). It is well known [1, 2] that the best way for this purpose is to study the dependence of 2DEG mobility on experimental conditions such as sample temperature, carrier density, and channel width. Recently, [3, 4] we have presented a first successful attempt at giving a theory of the mobilities of carriers confined in a single-side doped square quantum. We are able to explain the mobility of the single-side doped square quantum well dependence on carrier density and channel width. However, these investigation do not take into account mobility dependence on temperature. Thus, the goal of this paper is to provide a theory of
