The theoretical results for the EC are numerically evaluated, plotted and discussed for a specific RQWIP GaAs/GaAsAL. We also compared received EC with those for normal bulk semiconductors and quamtum wells to show the difference. The Ettingshausen effect in a RQWIP in the presence of an EMW is newly developed. | VNU Journal of Science: Mathematics – Physics, Vol. 33, No. 4 (2017) 17-23 Calculation of the Ettingshausen Coefficient in a Rectangular Quantum Wire with an Infinite Potential in the Presence of an Electromagnetic Wave (the Electron - Optical Phonon Interaction ) Cao Thi Vi Ba, Tran Hai Hung*, Doan Minh Quang, Nguyen Quang Bau Faculty of Physics, VNU University of Science, 334 Nguyen Trai, Hanoi, Vietnam Received 11 October 2017 Revised 24 October 2017; Accepted 25 October 2017 Abstract: The Ettingshausen coefficient (EC) in a Rectangular quantum wire with an infinite potential (RQWIP)in the presence of an Electromagnetic wave (EMW) is calculated by using a quantum kinetic equation for electrons. Considering the case of the electron - optical phonon interaction, we have found the expressions of the kinetic tensors ik , ik , ik , ik . From the kinetic tensors, we have also obtained the analytical expression of the EC in the RQWIP in the presence of EMW as function of the frequency and the intensity of the EMW, of the temperature of system, of the magnetic field and of the characteristic parameters of RQWIP. The theoretical results for the EC are numerically evaluated, plotted and discussed for a specific RQWIP GaAs/GaAsAL. We also compared received EC with those for normal bulk semiconductors and quamtum wells to show the difference. The Ettingshausen effect in a RQWIP in the presence of an EMW is newly developed. Keywords: Ettingshausen effect, Quantum kinetic equation, RQWIP, Electron - phonon interaction, kinetic tensor. 1. Introduction Nowadays, the theoretical study of kinetic effects in low-dimensional systems is increasingly interested, especially on the electrical, magnetic and optical properties of the low-dimensional systems such as: the absorption of electromagnetic waves, the acoustomagnetoelectric effect, the Hall effect, . These results show us that there are some significant differences from the bulk semiconductor that the .
