Typical quantities of the electronic structure and spin-transition of this molecule such as the atomic charge, the magnetic moment of Fe ion, the HOMO-LUMO gap, and the spin-state energy difference are varied as a function of dielectric constant of solvents. They reach saturation values with increasing dielectric constant. These results should give some hints to control spin transition temperature of spin-crossover molecules. | Communications in Physics, Vol. 23, No. 1 (2013), pp. 39-48 INFLUENCE OF SOLVENTS ON SPIN TRANSITION OF [Fe(abpt)2 (C(CN)3 )2 ] SPIN-CROSSOVER MOLECULE NGUYEN ANH TUAN Faculty of Physics, Hanoi University of Science, Vietnam National University, Hanoi Abstract. We present a density-functional study of the influence of solvents on the geometric structure and the electronic structure of the low-spin and high-spin states of [Fe(abpt)2 (C(CN)3 )2 ] molecule with abpt = 4-amino-3,5-bis(pyridin-2-yl)-1,2,4-triazole, in order to explore more about the way to control spin-crossover behavior of transition metal molecules. Our calculated results demonstrated that the geometric structure of molecule under consideration is only slightly changed by solvents. However, typical quantities of the electronic structure and spin-transition of this molecule such as the atomic charge, the magnetic moment of Fe ion, the HOMO-LUMO gap, and the spin-state energy difference are varied as a function of dielectric constant of solvents. They reach saturation values with increasing dielectric constant. These results should give some hints to control spin transition temperature of spin-crossover molecules. I. INTRODUCTION Along with the development of science, technology and human civilization, we are increasingly aware of and issues facing the energy efficiency, fuel, raw materials and natural resources as well as internal about environmental safety. so that we can develop sustainably. In particular the development of the electronics industry challenges associated with ”How to compact the size of the components and electronics devices and speed up the process even more”? The challenge now is ”How to manufacture the electronic components with size less than 100 nm and speed of response << 10−9 s”. This challenge requires both a technological breakthrough as well as finding new materials. The finding of molecular magnets has opened a door to go to the world of components and microelectronic
